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2024年12月27日发(作者：block可数吗)

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专利名称：Doping manner

发明人：MATSUMOTO ISAO,松本 功

申请号：JP特願昭63-246256

申请日：19880930

公开号：JP第2992757号B2

公开日：19991220

摘要：PURPOSE:To obtain a steep interface without being subject to the effect of

thermal diffusion through doping at a temperature lower than in the conventional

devices by using a substrate having a specific inclination in the direction of a <100> A face

nearest to the 100 face of a zinc blende type crystal as a substrate to which doping is

executed. CONSTITUTION:In a doping method containing a group III-V organometal, a

substrate having an inclination from 0.5 deg. to 0.6 deg. in the direction of a <111> A face

nearest from the 100 face of a zinc blende crystal, the substrate of a 100, 0.5 off <111> A

face or the substrate of a 100, 6 deg. off <111> A face, is employed as a substrate. When

doping is performed to the substrate having the inclination, a tendency in which a

reaction product is deposited on the substrate under the state of a step-flow is

increased, and the reaction product can be vapor-grown under the state of the step-flow

even when the temperature of the substrate is made lower than conventional devices.

Accordingly, a growth film, a surface of which is formed in a mirror surface and which has a

steep interface, can be acquired.

申请人：NIPPON SANSO KK,日本酸素株式会社

地址：東京都港区西新橋1丁目16番7号

国籍：JP

代理人：木戸 一彦 (外1名)

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