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2024年12月28日发(作者:时而安静时而活泼英文)
专利内容由知识产权出版社提供
专利名称:Exposure mask, exposure mask substrate,
method for fabricating the same, and
method for forming pattern based on
exposure mask
发明人:Shinichi Ito,Haruo Okano,Toru
Watanabe,Katsuya Okumura
申请号:US08/471782
申请日:19950606
公开号:US05620815A
公开日:19970415
摘要:An exposure mask having an excellent alignment accuracy between patterns,
which is prepared by first forming on a light transmissive substrate a light shielding film
or a semi-transparent film pattern (first pattern) somewhat larger than a desired
dimension, forming thereon a semi-transparent film or a light transmissive film pattern
(second pattern) so as to include all patterns of the desired dimensions made up of a
light shielding part, a semi-transparent part and a light transmissive part, and then
removing a projected part of the first pattern with use of the second pattern as a mask.
The semi-transparent film is formed of at least two layers each of which contains a
common element, thus the semi-transparent film can be made with use of the same
apparatus and when patterning, etching process can be carried out with use of the same
etchant.
Further, since in a mask including the semi-transparent pattern, at least that area of a
non-pattern zone where light reaches a wafer through the transfer, acts to shield the
exposure light, too narrowed pattern or insufficient focal depth can be prevented.
申请人:KABUSHIKI KAISHA TOSHIBA
代理机构:Finnegan, Henderson, Farabow, Garrett & Dunner, LP.
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