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2024年12月28日发(作者:时而安静时而活泼英文)

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专利名称:Exposure mask, exposure mask substrate,

method for fabricating the same, and

method for forming pattern based on

exposure mask

发明人:Shinichi Ito,Haruo Okano,Toru

Watanabe,Katsuya Okumura

申请号:US08/471782

申请日:19950606

公开号:US05620815A

公开日:19970415

摘要:An exposure mask having an excellent alignment accuracy between patterns,

which is prepared by first forming on a light transmissive substrate a light shielding film

or a semi-transparent film pattern (first pattern) somewhat larger than a desired

dimension, forming thereon a semi-transparent film or a light transmissive film pattern

(second pattern) so as to include all patterns of the desired dimensions made up of a

light shielding part, a semi-transparent part and a light transmissive part, and then

removing a projected part of the first pattern with use of the second pattern as a mask.

The semi-transparent film is formed of at least two layers each of which contains a

common element, thus the semi-transparent film can be made with use of the same

apparatus and when patterning, etching process can be carried out with use of the same

etchant.

Further, since in a mask including the semi-transparent pattern, at least that area of a

non-pattern zone where light reaches a wafer through the transfer, acts to shield the

exposure light, too narrowed pattern or insufficient focal depth can be prevented.

申请人:KABUSHIKI KAISHA TOSHIBA

代理机构:Finnegan, Henderson, Farabow, Garrett & Dunner, LP.

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