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2024年12月28日发(作者：乱世三义无删减全集免费看)

专利内容由知识产权出版社提供

专利名称：In order

发明人：大村 昌良

申请号：JP2002311746

申请日：20021025

公开号：JP3778156B2

公开日：20060524

摘要：

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a high-

concentration Ge layer is formed on the surface of an impurity diffusion layer in contact

with a wiring layer.

SOLUTION: A Si substrate has a first impurity diffusion layer which is formed in a

specified surface layer region of a crystal region of the first conductivity type and has the

opposite conductivity to the first conductivity, a second impurity diffusion layer which is

formed in another specified surface layer region of the crystal region and has the same

conductivity as the first conductivity, a first wiring layer which is formed for connecting

the first impurity diffusion layer and a second wiring layer which is formed for connecting

the second impurity diffusion layer. In this case, the surface of both the first and second

impurity diffusion layers of the Si substrate which are connected to the first and second

wiring layers is etched and Ge is added to the surface layer part of the first and second

impurity diffusion layers. The concentration of Ge is distributed in such a way that it is

almost the highest on the surface and is continuously reduced in the direction of the

depth.

COPYRIGHT: (C)2003,JPO

申请人：ヤマハ株式会社

地址：静岡県浜松市中沢町１０番１号

国籍：JP

代理人：高橋 敬四郎,来山 幹雄

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