admin 管理员组文章数量: 1086019
2024年12月28日发(作者:php免费看)
专利内容由知识产权出版社提供
专利名称:METHOD FOR MANUFACTURING
SUBSTRATE FOR PHOTOELECTRIC
CONVERSION ELEMENT
发明人:AKIYAMA, Shoji,KUBOTA, Yoshihiro,ITO,
Atsuo,KAWAI, Makoto,TOBISAKA,
Yuuji,TANAKA, Koichi
申请号:JP2007054793
申请日:20070312
公开号:WO07/105675P1
公开日:20070920
摘要:On the surface of a silicon substrate (100), a silicon layer (10B) having a
conductivity opposite to that of a bulk is arranged, hydrogen ions are injected into a
prescribed depth (L) in a surface region through the silicon layer (10B), and a hydrogen
ion injected layer (11) is formed. Then, a germanium crystal layer (20A) of the n-type, i.e.,
the conductivity type opposite to that of the silicon layer (10B), and a germanium crystal
layer (20B) of the p-type, i.e., the conductivity type opposite to that of the germanium
crystal layer (20A) are successively grown by vapor deposition, and a germanium crystal
(20) is provided. The surface of the germanium crystal layer (20B) is bonded with the
surface of the supporting substrate (30), and in such status, shock is applied from the
external to separate a silicon crystal (10) from the silicon substrate (100), along the
hydrogen ion injected layer (11), and a laminated structure of the germanium crystal (20)
and the silicon crystal (10) is transferred (peeled) onto the supporting substrate (30).
申请人:AKIYAMA, Shoji,KUBOTA, Yoshihiro,ITO, Atsuo,KAWAI, Makoto,TOBISAKA,
Yuuji,TANAKA, Koichi
地址:JP,JP,JP,JP,JP,JP,JP
国籍:JP,JP,JP,JP,JP,JP,JP
代理机构:OHNO, Seiji
更多信息请下载全文后查看
版权声明:本文标题:METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECT 内容由网友自发贡献,该文观点仅代表作者本人, 转载请联系作者并注明出处:http://www.roclinux.cn/p/1735430759a1663172.html, 本站仅提供信息存储空间服务,不拥有所有权,不承担相关法律责任。如发现本站有涉嫌抄袭侵权/违法违规的内容,一经查实,本站将立刻删除。
发表评论