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2024年12月28日发(作者：php免费看)

专利内容由知识产权出版社提供

专利名称：METHOD FOR MANUFACTURING

SUBSTRATE FOR PHOTOELECTRIC

CONVERSION ELEMENT

发明人：AKIYAMA, Shoji,KUBOTA, Yoshihiro,ITO,

Atsuo,KAWAI, Makoto,TOBISAKA,

Yuuji,TANAKA, Koichi

申请号：JP2007054793

申请日：20070312

公开号：WO07/105675P1

公开日：20070920

摘要：On the surface of a silicon substrate (100), a silicon layer (10B) having a

conductivity opposite to that of a bulk is arranged, hydrogen ions are injected into a

prescribed depth (L) in a surface region through the silicon layer (10B), and a hydrogen

ion injected layer (11) is formed. Then, a germanium crystal layer (20A) of the n-type, i.e.,

the conductivity type opposite to that of the silicon layer (10B), and a germanium crystal

layer (20B) of the p-type, i.e., the conductivity type opposite to that of the germanium

crystal layer (20A) are successively grown by vapor deposition, and a germanium crystal

(20) is provided. The surface of the germanium crystal layer (20B) is bonded with the

surface of the supporting substrate (30), and in such status, shock is applied from the

external to separate a silicon crystal (10) from the silicon substrate (100), along the

hydrogen ion injected layer (11), and a laminated structure of the germanium crystal (20)

and the silicon crystal (10) is transferred (peeled) onto the supporting substrate (30).

申请人：AKIYAMA, Shoji,KUBOTA, Yoshihiro,ITO, Atsuo,KAWAI, Makoto,TOBISAKA,

Yuuji,TANAKA, Koichi

地址：JP,JP,JP,JP,JP,JP,JP

国籍：JP,JP,JP,JP,JP,JP,JP

代理机构：OHNO, Seiji

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