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2024年12月28日发(作者：dispatcherservlet是什么)
专利内容由知识产权出版社提供
专利名称：DOPEN REGION IN AN SOI SUBSTRATE
发明人：WRISTERS, Derick, J.,WEI, Andy, C.,FUSELIER,
Mark, B.
申请号：US2003017918
申请日：20030528
公开号：WO03/105232P1
公开日：20031218
摘要：In one illustrative embodiment, the method comprises providing an SOI
substrate (30) comprises of an active layer (30C), a buried insulation layer (30B) and a bulk
substrate (30A), forming a doped region (34) in the bulk substrate (30A) under the active
layer, forming a plurality of transistors (32) above the SOI substrate in an area above the
doped region (34) and applying a voltage to the doped region to vary a threshold
voltage of at least one of the plurality of transistors. In another illustrative embodiment,
the method comprises providing a consumer product comprised of at least one
integrated circuit product (64), the integrated circuit product being comprised of a
plurality of transistors (32) formed in an active layer (30C) of an SOI substrate (30) above a
doped region (34) formed in a bulk substrate (30A) of the SOI substrate, the doped
region (34) being formed under the active layer, sensing an activity level of the integrated
circuit product (64) and applying a voltage of magnitude and a polarity to the doped
region, the magnitude and polarity of the applied voltage being determined based upon
the sensed activity level of the integrated circuit product (64).
申请人：ADVANCED MICRO DEVICES, INC.
地址：US
国籍：US
代理机构：DRAKE, Paul, S.,PICKER, Madeline, M.
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