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2024年12月28日发(作者：const翻译)

专利内容由知识产权出版社提供

专利名称：Etch Stop Layer Between Substrate and

Isolation Structure

发明人：Ming-Chang Wen,Chang-Yun Chang,Hsien-

Chin Lin,Hung-Kai Chen

申请号：US17240007

申请日：20210426

公开号：US2A1

公开日：20210805

专利附图：

摘要：A device includes a substrate; semiconductor fins extending from the substrate;

a liner layer on sidewalls of the semiconductor fins; an etch stop layer over the substrate

and extending laterally from a first portion of the liner layer on a first one of the

semiconductor fins to a second portion of the line layer on a second one of the

semiconductor fins; an isolation structure over the etch stop layer, wherein the etch stop

layer and the isolation structure include different materials; a gate dielectric layer over a

top surface of the isolation structure; and a dielectric feature extending through the gate

dielectric layer and into the isolation structure, wherein the isolation structure and the

dielectric feature collectively extend laterally from the first portion of the liner layer to

the second portion of the line layer.

申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

地址：Hsinchu TW

国籍：TW

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