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2024年12月28日发(作者：java的switch语句)

专利内容由知识产权出版社提供

专利名称：Method for producing a high quality useful

layer on a substrate

发明人：Christophe Maleville,Eric Neyret,Nadia Ben

Mohamed

申请号：US10691403

申请日：20031021

公开号：US2A1

公开日：20050203

专利附图：

摘要：A method for producing a high quality useful layer of semiconductor material

on a substrate. The method includes implanting at least two different atomic species into

a face of a donor substrate to a controlled mean implantation depth to form a weakened

zone therein and to define a useful layer. The implanting step is conducted to minimize

low-frequency roughness at the weakened zone. Next, the method includes bonding a

support substrate to the face of the donor substrate, and detaching the useful layer

from the donor substrate along the weakened zone. A structure is thus formed that

includes the useful layer on the support substrate with the useful layer presenting a

surface for further processing. The technique also includes thermally treating the

structure to minimize high-frequency roughness of the surface of the useful layer. The

result is a surface having sufficient smoothness so that chemical mechanical polishing

(CMP) is not needed.

申请人：Christophe Maleville,Eric Neyret,Nadia Ben Mohamed

地址：La Terrasse FR,Sassenage FR,Renage FR

国籍：FR,FR,FR

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