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2024年12月28日发(作者：gamma分布特征函数计算)

专利内容由知识产权出版社提供

专利名称：HIGH Q TRANSFORMER DISPOSED AT LEAST

PARTLY IN NON-SEMICONDUCTOR

SUBSTRATE

发明人：TANG YIWU,イウ・タン,ZHANG JIN,ジャン・

ジン

申请号：JP2013197613

申请日：20130924

公开号：JP2014053907A

公开日：20140320

专利附图：

摘要：PROBLEM TO BE SOLVED: To remedy a low quality factor Q, a low coupling

coefficient, and a large integrated circuit die area occupied, of an inductor on a silicon

ON: An assembly involves an integrated circuit die that is, e.g., flip-chip

bonded to a non-semiconductor substrate by a plurality of low-resistance microbumps.

At least a part of a novel high-frequency transformer is disposed in the non-

semiconductor substrate, where the non-semiconductor substrate is a substrate of a ball

grid array (BGA) integrated circuit package. At least one of the low-resistance

microbumps connects the part of the transformer in the substrate to a circuit in the

integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k

of at least 0.4, and a transformer quality factor Q of at least 10. The novel transformer

structure is for use in coupling differential outputs to a single-ended input of a driver

amplifier in a transmit chain of an RF transceiver within a cellular telephone.

申请人：QUALCOMM INCORPORATED,クゥアルコム・インコーポレイテッド

地址：アメリカ合衆国、カリフォルニア州 ９２１２１－１７１４、サン・ディエゴ、モアハウ

ス・ドライブ ５７７５

国籍：US

代理人：蔵田 昌俊,福原 淑弘,中村 誠,野河 信久,峰 隆司,河野 直樹,砂川 克,井関 守三,赤穂 隆雄,井

上 正,佐藤 立志,岡田 貴志,堀内 美保子

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