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2024年12月28日发(作者:gamma分布特征函数计算)
专利内容由知识产权出版社提供
专利名称:HIGH Q TRANSFORMER DISPOSED AT LEAST
PARTLY IN NON-SEMICONDUCTOR
SUBSTRATE
发明人:TANG YIWU,イウ・タン,ZHANG JIN,ジャン・
ジン
申请号:JP2013197613
申请日:20130924
公开号:JP2014053907A
公开日:20140320
专利附图:
摘要:PROBLEM TO BE SOLVED: To remedy a low quality factor Q, a low coupling
coefficient, and a large integrated circuit die area occupied, of an inductor on a silicon
ON: An assembly involves an integrated circuit die that is, e.g., flip-chip
bonded to a non-semiconductor substrate by a plurality of low-resistance microbumps.
At least a part of a novel high-frequency transformer is disposed in the non-
semiconductor substrate, where the non-semiconductor substrate is a substrate of a ball
grid array (BGA) integrated circuit package. At least one of the low-resistance
microbumps connects the part of the transformer in the substrate to a circuit in the
integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k
of at least 0.4, and a transformer quality factor Q of at least 10. The novel transformer
structure is for use in coupling differential outputs to a single-ended input of a driver
amplifier in a transmit chain of an RF transceiver within a cellular telephone.
申请人:QUALCOMM INCORPORATED,クゥアルコム・インコーポレイテッド
地址:アメリカ合衆国、カリフォルニア州 92121-1714、サン・ディエゴ、モアハウ
ス・ドライブ 5775
国籍:US
代理人:蔵田 昌俊,福原 淑弘,中村 誠,野河 信久,峰 隆司,河野 直樹,砂川 克,井関 守三,赤穂 隆雄,井
上 正,佐藤 立志,岡田 貴志,堀内 美保子
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