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2024年12月28日发(作者：countif函数为什么只显示公式)

专利内容由知识产权出版社提供

专利名称：Biasing the substrate region of an MOS

transistor

发明人：Augustin Monroy Aguirre,Guillaume

Bertrand,Philippe Cathelin,Raphael Paulin

申请号：US15463493

申请日：20170320

公开号：US09847349B1

公开日：20171219

专利附图：

摘要：An integrated electronic device is supported by a substrate of a silicon on

insulator type. At least one transistor is formed in and on a semiconductor film of the

substrate. The transistor includes a drain region and a source region of a first conductivity

type and a substrate (body) region of a second conductivity type lying under a gate

region. An extension region laterally continues the substrate (body) region beyond the

source and drain regions and borders, in contact with, the source region through a

border region having the first conductivity type. This supports formation of an electrical

connection of the source region and the substrate (body) region.

申请人：STMicroelectronics SA

地址：Montrouge FR

国籍：FR

代理机构：Gardere Wynne Sewell LLP

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