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2024年12月28日发(作者：jab)
专利内容由知识产权出版社提供
专利名称：N-Gate/N-Substrate or P-Gate/P-Substrate
capacitor to characterize polysilicon gate
depletion evaluation
发明人：Zhigang Wang,Nian Yang,Yue-song He
申请号：US09917440
申请日：20010727
公开号：US06888157B1
公开日：20050503
专利附图：
摘要：A capacitor structure for characterizing polysilicon gate depletion effects of a
particular semiconductor fabrication process. In one embodiment, an N-Gate/N-Substrate
capacitor is fabricated with the semiconductor fabrication process which is being
evaluated for its polysilicon gate depletion effects. The N-gate of capacitor structure is
driven to depletion while the N-substrate is simultaneously driven to accumulation.
Capacitance-voltage measurements are taken. Based on these CV measurements, the
polysilicon depletion effects are then obtained for that particular semiconductor
fabrication process. In another embodiment, a P-Gate/P-Substrate capacitor is fabricated
with the semiconductor fabrication process. The gate of the P-Gate/P-Substrate capacitor
is driven to depletion while the substrate is simultaneously driven to accumulation. Based
on the CV measurements performed on the P-Gate/P-Substrate capacitor, the polysilicon
depletion effects can be obtained for that particular semiconductor fabrication process.
In a third embodiment, a capacitor structure device is used to evaluate the polysilicon
gate depletion effects of a semiconductor fabrication process. Different voltages are
selectively applied to the gate of either an N-Gate/N-Substrate capacitor or a P-Gate/P-
Substrate capacitor while its capacitance is measured. Based on the CV measurements,
the polysilicon gate depletion effects for that particular semiconductor fabrication
process is characterized.
申请人：Zhigang Wang,Nian Yang,Yue-song He
地址：San Jose CA US,San Jose CA US,San Jose CA US
国籍：US,US,US
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