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2024年12月28日发(作者：字长反码补码奥赛题)

专利内容由知识产权出版社提供

专利名称：Lead silicate based capacitor structures

发明人：Robert Benjamin Laibowitz,Thomas

McCarroll Shaw

申请号：US09543637

申请日：20000406

公开号：US06211543B1

公开日：20010403

专利附图：

摘要：A capacitor and method of making is described incorporating a semiconductor

substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium

or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and

a high dielectric constant material such as barium or lead titanate may form the dielectric.

The silicate layer may be formed by evaporating and diffusing, ion implanting, or

electroplating and diffusing barium or lead. The high epsilon dielectric constant material

may be formed by sol gel deposition, metal organic chemical vapor deposition or

sputtering. The invention overcomes the problem of a bottom electrode and dielectric

layer which chemically interact to form a silicon oxide layer in series or below the desired

dielectric layer.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

代理人：Robert M. Trepp

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