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Lam5 Poly-Si TCP Etcher

(lam5)

1.0 Title

Lam5 Poly-Si TCP (Transformer Coupled Plasma) Etcher

2.0 Purpose

Lam5 is an automatic, cassette-to-cassette, TCP etcher for Poly-Silicon etching. This tool is currently

dedicated to etching single crystal silicon, polycrystalline silicon, silicon carbide, silicon germanium, and

germanium films. No metal etching or using a metal hard mask to etch other films are allowed in this

tool. Lam5 operates under an upgraded GUI software, Envision

®

. This system is capable of etching

deep sub-micron features with near vertical sidewalls and provides extremely high selectivity over the

underlying oxide with the over etch recipes. The robot is set up for 6-inch wafer. A 6-inch carrier wafer

or a 6-inch pocket wafer can be used to process a 4-inch wafer or samples of other sizes (see Process

Notes, Section 8.3, for details).

3.0 Scope

This document describes the general operations of Lam5 poly etcher machine, editing recipe, setting up

graphs to monitor endpoint signals, and basic trouble shooting procedures are also covered here.

4.0 Applicable Documents

Revision History

4.1

4.2

4.3

Microlab Online Manual Chapter 7.0 - Lam Etchers Overview

.

TCP 9400/9400SE System Operation, Envision, Lam Research, 1997

TCP 94400 Operation and Maintenance Manual, Lam Research, 1989

5.0

Definitions & Process Terminology

5.1 TCP Etcher: The TCP etcher has an upper TCP coil and lower electrode powered up

simultaneously during etch process. The TCP coil generates high density plasma, while the

plasma bias can be independently controlled by the powered lower electrode. It usually operates

at tens milli-torr process pressure range to be able to etch deep sub-micron features.

Automatic Endpoint Detector: An optical device that traces the light emitted from the etch

byproduct in the plasma. It can be programmed to end the etch process at a specified condition.

Lam5 uses Channel A (405 nm for poly-silicon) and Channel B (520nm for silicon oxide) to

monitor the amount of SiCl and CO species respectively.

Etch Rate (ER): The thickness of the film etched away, per unit time and usually in Å/minute.

Etch Non-Uniformity: A measure of the etch uniformity. Microlab process monitoring sites

defines as (max ER – min ER)/ (average ER), usually in %.

Isotropic/Anisotropic Etch: An etch process that has the same ER in all directions is isotropic.

An etch process that etches in the direction perpendicular to the substrate surface is anisotropic.

A plasma etcher, e.g. Lam5 usually etches more anisotropically.

Etch Anisotropy: The degree of anisotropy is defined by 1 – (lateral etch rate/vertical etch rate).

A value of zero means isotropic etching and one is perfect anisotropic.

5.2

5.3

5.4

5.5

5.6

lam5 Chapter 7.5

5.7

5.8

Etch Selectivity:

The ratio of etch rates between the etched thin film (top layer) and the

underlying substrate, if/when etched with the same recipe.

Over-Etch: An optional second etch step with etch chemistry that maximizes the etch selectivity.

It removes the residual film due to previous etch non-uniformity with minimum damage to the

underlying substrate/film. The etch rate is usually lower in this step.

Pocket Wafer: A six-inch wafer with a 4-inch pocket (recessed etched area), which enables one

to load 4-inch wafer into a 6-inch process tool.

5.9

5.10 Kapton Tape: A special polyimide tape with silicon adhesive on it, which is good for high

temperature application, and can withstand temperature range of –100ºF to + 500ºF.

6.0 Safety

Follow the general safety guidelines in the lab as well as the specific safety rules, as per follows:

6.1

6.2

RF Power Hazard: LAM 5 uses two 13.56MHz, 1250W RF power generators. Never touch a RF

power cord when the RF power is on. Do not look at the plasma for a long period of time.

Chemical Hazard: All process gases used by LAM 5 are confined in the gas delivery system and

the vacuum chambers. However, if you smell bleach or other un-usual odor, stop the etch

process and evacuate the area. Inform Microlab staff immediately. There may be a leak in

the system, or problem in the ventilation.

Pinch Hazard: The wafer cassette elevators may pinch your fingers. Load/unload wafer cassette

with caution.

6.3

6.4 Rule Applied to New Recipe or Modifying Existing Recipe: It is required that you consult the

process staff before creating a new recipe or modifying old ones. A recipe defined outside the

machine specification may damage the tool and/or create potential hazardous situation.

7.0 Statistical/Process Data

7.1 Microlab Web Page/Processing/Process Monitor.

7.2 WAND equipment enable message for Lam5.

7.3 Problem and comment section under the equipment section of WAND.

8.0 Available Processes, Gases, Process Notes

8.1 Available Processes

See the Appendix for more recipe details!

8.1.1 Recipe 5001: Anisotropic Poly-Si Etch. The same process parameters (steps) used for

the Main Etch part (steps) of the 5003 recipe. This is also used for ASML zero mark (PM

Mark) etching.

Recipe 5002: Poly-Si etching can be accomplished with a high degree of selectivity over

a thin underlying oxide with 5002 recipe. The same process parameter is used for the

Over Etch part (steps) of the 5003 recipe.

Note: small amount of O2 is added to improve poly to oxide selectivity

8.1.3 Recipe 5003: Standard Poly-Si Etch with native oxide break through, main etch, and

over etch steps. This recipe provides a faster etch rate with the main etch steps followed

by a slower, but highly selective (poly to oxide) Over Etch steps.

Recipe 5004: Native oxide break through/etch using Cl

2

chemistry.

Recipe 5005: Native oxide break through/etch using CF

4

chemistry. The oxide break

through steps are used in the 5003 recipe.

- 2 -

8.1.2

8.1.4

8.1.5

lam5 Chapter 7.5

8.1.6

8.2

8.2.1

8.2.2

8.2.3

8.2.4

8.2.5

8.2.6

8.2.7

8.2.8

8.3

Recipe 6001:

Anisotropic Poly-SiC Etch.

Cl

2

: Used in Poly-Si main etch for high etch rate.

CF

4

: Used for native oxide break through and oxide etch.

CHF

3

: Currently not used, but can be used with CF

4

for oxide etch.

SF

6

: Currently not used, but can be used for isotropic oxide etch.

HBr: Used in Poly-Si main and over etch to improve selectivity over oxide.

O

2

: Used in Poly-Si over etch in conjunction with HBr for high selectivity.

He: Used as diluent to improve etch uniformity. Also used in He Clamp to improve the

wafer backside cooling,

O2high: can be used for chamber cleaning.

Process Gases

Process Notes

8.3.1 Lam5 is restricted to etching single crystal silicon, polycrystalline silicon, silicon carbide,

silicon germanium, and germanium films, only Permission must be obtained from

process group to etch other gate stacks or materials in this tool.

Glass substrates (including Pyrex) are not allowed in lam5. This means deposited

films on top of the glass substrate/s, as well as glass substrate itself, must not be etched

in lam5. See Chapter 1.3 - MOD 31, as well as Chapter 1.5 for more details on

processing glass substrates in lam etchers.

Metal films in general and metal hard masks specifically are not allowed in Lam5.

This means etching metals and/or using metal hard masks to etch other films underneath

the hard mask are not allowed in this tool.

8.3.2

8.3.3

8.3.4 Absolutely no gold allowed in the VLSI area. Materials exposed to gold and/or other

highly diffusive metals in the noble metal group, as well as copper are not allowed in this

tool.

8.3.5 The over-etch step selectivity and length of time to clear main etch residue depends on

the device designs. Most Lam5 users customized their over-etch steps to fit their own

designs.

Lam5 uses a mechanical clamp, attached to the upper electrode, to secure the wafer on

the lower electrode. Helium gas then flows on the backside of the wafer to cool it

uniformly. The backside of the wafer needs be smooth, free of particles and/or any

etch patterns. Otherwise, the excess leakage of helium from the backside of the wafer

could create process pressure stabilization and helium clamp pressure stabilization and

abort the process.

Note: the lower electrode is domed .050” center to edge. When the wafer is clamped

down, it is domed as well.

8.3.7 Use a 6-inch pocket wafer with a 4-inch recessed area to etch blanket film/s on 4-inch

wafers or smaller samples without using adhesive material/s. Therefore, do not use a

pocket wafer to carry photo-resist patterned wafers/samples inside the tool. Photo-resist

on such wafer/sample will be burnt due to the fact that heat transfer between the sample

and pocket area will be hindered by the existing gap (space) between 4-inch wafer and

the pocket wafer. This results in elevated temperatures during the etch process and a

burnt resist layer that may be impossible to remove!

Secure your PR patterned 4-inch wafer or smaller samples onto a clean carrier (flat)

wafer by using Kapton tape or cool grease. The carrier wafer in a good contact with PR

8.3.6

- 3 -

lam5 Chapter 7.5

sample can provide adequate heat transfer away from your sample onto the water-cooled

electrode. The only kapton tape allowed in Lam5 and/or any other etcher is 2345-1D,

manufactured by Dupont. This is an stock item in the Microlab office. Place small amount

of tape on top edges of your sample to hold it down in a good contact with your carrier

wafer. Clean your carrier wafers in sink8 before reusing them in this tool, as the glue left

behind by the Kapton tape can contaminate the etcher chamber and/or other members'

devices/runs.

A very thin layer of Cool Grease is an alternative method to Kapton tape, which goes on

at the bottom of 4-inch wafer/sample for good heat conduction and also securely holding

your sample on the carrier wafer during mechanical transfer (Chapter 1.3, MOD 35).

Make sure that the glue residues from previous etch sessions are thoroughly cleaned, if

you re-use a carrier wafer. Such residues could easily contaminate the etch chamber and

severely impact consequent etch processes.

Note: Do not use Lam5 Dummies as carrier wafers for processing your 4-inch or

smaller substrate in this tool. Use your own carrier wafers instead to

prevent cross contamination. Clean your carrier wafers in Sink8 before

reusing them to prevent cross contamination.

8.3.8 You can save a file name, e.g. a customized recipe on the Lam5 system hard drive for

your future use or as a backup. Please note that the file name DOES NOT have the old

8-character limit imposed by the old DOS system, however, file name still can not contain

any special character/s or space/s. Please start the file name with your login name

followed by an underscore “_”, e.g. "ferrari_polyetch1". This will aid you find your file

(recipe name) in the directory, much quicker and the job of administrating the tool much

easier for the staff to manage.

9.0 Equipment Operation

9.1 System Description

Lam5 is a fully automatic etcher. All operations, except wafer cassette loading/and unloading, are

controlled by Envision, a UNIX Graphical User Interface (GUI) software package. The system is

operated by the keyboard with trackball and a CRT display on the front of the etcher. Do not

touch any other hardware switches. On the CRT display, the GUI screen is divided into three

major areas: Header (top), Control/Info Pages (center), Page Group Buttons (bottom). See Figure

11.1.

9.1.1 Header – The header contains the followings:

► Wafer Transfer Button: When clicked, it pauses or resumes wafer transport. It does

not affect the etch process in the etch chamber.

► Non-edit field for Time/Date, Machine Status, and Alarm Status: During normal

operation, the Machine Status should show only Load and Process Idle, Load and

Process Active, or Wafer clean out.

► Help Button: Provides limited help on the tool.

► Security Button (pad lock icon): Click this button to login/out the system.

9.1.2 Control/Info Pages – There are total of 9 control/info pages available on the Envision

system. These pages can be selected by invoking the desired menu options (page

buttons) available at the bottom of the screen. Only 5 of these pages are accessible by a

qualified Lam5 user, as per follows:

► Operate Page: Select recipe and start/stop wafer loading.

- 4 -

lam5 Chapter 7.5

► Process Page:

Monitor wafer movement and etch chamber process parameters.

Manually End-Point a process step, or abort the whole process.

► Recipe Page: Write new recipe or edit existing recipe.

► Data Log Page: Monitor endpoint signal traces.

► Alarm Page: View and clear/purge alarms.

Note: Diagnose, Maintain, Setup, and Library pages can be viewed by users. Only

Equipment staff is allowed to change the system setting on these pages.

9.1.3 Page Buttons – These are the 9 page buttons discussed earlier located at the bottom of

the screen. Click a button to select/display the corresponding control/info page. There is

a Menu button on the left lower corner. Click it to access to the sub-pages of the

displayed control/info page.

9.2 System Operation

9.2.1 Enable Lam5 on the WAND. Check with equipment staff if there is a problem reported

when you enable Lam5.

9.2.2 On the GUI screen of Lam5, check the header line. It should read “Load and Process

Idle: Host: LOCAL“, and the alarm status below should read “All system normal”. Do not

use Lam5 if the header line reads otherwise. You will need to log in before accessing

various control/info screens and be able to etch your wafers, as per follows:

9.2.3 Click [Security] Button (padlock icon) to open the User Login Window. Enter the ID

(currently set as "labmember") followed by the return key, and again return on the

Password field (no password is required for this access level). This will log you into the

machine. The security button located at the top right of the screen will changes from "no

user" to "labmember".

9.2.4 Load wafers to be processed in a blue cassette and load the cassette onto the entrance

indexer (left side). Make sure the “H bar” on the bottom of the cassette sit properly in the

slot at the center of the indexer. The indexer will lower to the first wafer position of the

cassette.

Note: Wafer flat needs not be aligned. Lam5 has an automatic flat finder for alignment.

Make sure the wafers seat all the way to the end of the slots. A sticking out wafer

will cause problem for the flat finder.

9.2.5 Load another blue cassette on the receiving indexer (right side). It will lower to the last

empty slot position. If a cassette already loaded on the receiving indexer and it is in the

up position, tilt it toward you about 30 degrees and then release. It will start lowing down.

9.2.6 Click [Operate] Page Button, the screen displays the Control Panel page (Figure 11.1). If

not, click [Menu] Button on the right lower corner, and select Control Panel. On the left

side of the [Start] Button, make sure that “Load and Process” is selected (white bullet

means selected; grey means not).

9.2.7 Click [Select Recipe] Button, and select the recipe you plan to use.

Note: Do not overwrite the standard recipes, if modifications are to be made, then save

as a different recipe/name, as prescribed in Section 9.3.2.

9.2.8 Click [Start] Button to start the etch process. The header line change from Load and

Process Idle to Load and Process Active.

9.2.9 Click [Process] Page Button to monitor the wafer transport and etch process (Figure

11.2). If the screen does not display the Main Chamber Page, click [Menu] Button on the

right lower corner, and select Main Chamber. During the etch process, you can select to

perform the following tasks:

- 5 -

lam5 Chapter 7.5

► Click [Manual Endpoint]

Button to skip to next recipe step.

► Click [Abort Process] Button to skip to the end of the recipe.

Note: End point can be monitored in Data Log page.

9.2.10 If you want to change the etch time or select a new recipe for the next and following

wafers, click [Pause Transport] Button on the top left corner of the screen. The wafer in

the main etch chamber will continue and complete its original process.

Refer to Section 9.3 to change the etch time. Repeat Section 9.2.6 - 9.2.7 to select a new

recipe or the saved recipe with the new etching time.

Click [Resume Transport] Button to resume processing the wafer paused in the load

lock or load station.

9.2.11 If a system alarm occurs during the process, refer to Section 9.5 for responding actions.

9.2.12 After the process is complete, and the last wafer is loaded into the receiving cassette, the

receiving indexer will rise up. If not, make sure the robot arm has retracted, then tilt the

cassette it toward you about 30 degrees and then release. It will start rising up. Wait till

the indexer stop, and then remove the cassette to unload your wafers.

9.2.13 Click [Security] Button (padlock icon) to log out. Disable Lam5 on the WAND.

9.3 Recipe Editing/Writing

9.3.1 Click [Recipe] Page Button to access the recipe editor page (Figure 11.3).

Below the header, there are two buttons: one for Module selection (only PM1 9400

available) and the other for Page selection. Make sure [Recipe] shows on the button. If

not, Click the Button and select “Recipe” from the pull-down menu.

On the right hand side of the screen, there are 8 buttons for recipe file managements,

e.g. copy, delete, and etc. It is recommended that you modify an existing recipe for your

process, instead of writing new one from scratch.

9.3.2 Click [Open] Button to open an existing recipe, or click [New] Button to write a new

recipe. If you are writing a new recipe, enter the recipe name in the Recipe field, and a

line of description in the Comment field.

Note: A recipe, created by lab member, should start with the member’s login name,

followed by an underscore, then the remaining of the recipe name. Important!

Any recipes not saved this way will be deleted.

9.3.3 You can enter/edit the process variables in every process steps. The basic variables use

in the standard recipes are:

► Pressure – The minimum pressure depends on the total gas flow.

► TCP RF - Upper electrode power.

► Bias RF - Lower electrode power.

► Gap – 5.8 cm for all recipes

► Process Gas Flows – Only Cl

2

, HBr, CF

4

, O

2

, and He are used.

► He Clamp – 4 Torr for all the recipes

► Completion – There are 6 options for this field.

Stabl: If the process condition is stabilized within the time specified in the Time field

below, the recipe advanced to next step. Otherwise, the recipe holds and the system

alarms. You have to clear the alarm (Section 9.5) to continue.

- 6 -

lam5 Chapter 7.5

Time: The recipe step will run the whole length of time specified in the Time field

below.

EndPt: The recipe step will run till the Endpoint condition specified in the Endpoint

fields (explained at the end of this section) is reached. If the Endpoint condition is not

reached within the time period specified in the Time field below, the system alarms.

You have to clear the alarm (Section 9.5) to continue.

EndPt2: Not used.

OverEtch: The recipe step will run the percentage, specified in the Time field below,

of the length of time of the previous EndPt step.

Recipe: This entry terminates the recipe. This process step and following steps will

not be executed.

► Time (sec): The maximum length of time the recipe step will run. In case for the over-

etch, it set the percentage of time of the previous EndPt time.

Note: Do not select “Recipe Params” from the pull-down menu. The Recipe

parameter page set up the chamber temperature, the lower electrode

temperature and other machine parameters. The chamber and lower

electrode temperature are controlled by two separate chillers in the service

area. If you need to change these temperatures, contact equipment staff.

The followings setup Endpoint Trigger in the Main Etch Step (EndPt step)

► Channel: The automatic Endpoint detector channel. Enter “A” for poly-silicon etch.

► Delay: In this time period, the endpoint signal is ignored due to plasma stabilization,

and etc.

► Norm (sec): In this time period, the endpoint signal reading is normalized (averaged).

► Norm Value: The system will shift the normalized endpoint signal reading to a

number that is easy for calculation, e.g. 5000 in the standard recipes.

► Trigger (%): If the endpoint signal falls below this percentage of the norm value, the

recipe step ends and continue on next step.

Note: Do not select “EndPoint2” from the pull-down menu since it is not used in

Lam5.

9.3.4 Process variable tolerance set ups

There two types of tolerances can be set in a recipe: hard tolerance, and soft tolerance. If

a process variable exceeds the hard tolerance, the system will alarm and the recipe step

will abort and you have to clear the alarm (Section 9.5) to continue. If a process

parameter exceeds the soft tolerance, the system will just alarm and continue. The

default tolerance setting for all steps in a recipe is 10% for both soft and hard tolerance.

To change the tolerance of a process variable, click the [Recipe] button next to the work

“Page”, and select [Recipe Tolrnc] from the pull-down menu. You can now change the

variable tolerance of process variables.

It is recommended to increase tolerance of Pressure in the recipe step that plasma

strikes. When the plasma strikes, the pressure jumps up a few mtorr for a very short of

time. If the pressure was below 20 mtorr, the pressure increase will exceed the 10% hard

tolerance.

9.3.5 Save the recipe to the hard drive by click [Save] Button on the right side of the screen.

Do not over-write the standard recipes on the hard drive. If you are saving a modified

standard recipe, click [Save As] Button. And save the recipe with the a new name that

starts with you login name.

- 7 -

lam5 Chapter 7.5

Note:

Only the recipes saved on the hard drive can be selected on [Operate] page. If

you have modified a recipe but have not saved it on the hard drive, you will be

running the un-modified version of the recipe when you select it on [Operate]

page.

9.4 Endpoint Signal Tracing

9.4.1 Click [Datalog] Page Button and the Graph Page shows on the screen (Figure 11.4). If

not, Click [Menu] Button, then select “Graph”.

9.4.2 On the lower left corner of the Graph page, there are four signal channel fields, i.e. A, B,

C and D, that you can select. Select a channel, then click [Load Config] Button below

the field. A window with all the preset signal channel configurations will pop up. Select the

signal, e.g. Endpoint Channel A, TCP RF, and etc. Do the same for other signal

channels.

9.4.3 Click [Manual On] Button below the graph to start the signal tracing. The signal traces

will show up when the recipe is running in the process chamber.

9.4.4

9.4.5

On the top and bottom of the Y axis, you can enter the range each tracing signal. Adjust

the range according to you preference.

If you are satisfied with your set up and plan to use the same set up in the future, Click

[Save Set] Button on the lower left corner. Save the set up with the name started with

your login. In the future, you can load the same setup by clicking [Load Set] button, and

then select the set up you saved.

9.5 Responding to An Alarm

9.5.1 Alarm Indicator Symbols – There are three type of alarm symbols with a brief message

displayed in the second line of the header area of each page screen.

► Green Circle: All system Normal.

► Red Triangle: Indicates an emergency condition, process abort by user, or a process

variable exceeding hard tolerance. Wafer transport suspended; and the alarm must

be cleared by the user.

► Yellow Square: Indicates a less severe condition. The wafer in the process chamber

will either hold at a stabilization step, or complete the etch step. However, the wafer

transport will be suspended until the alarm condition has been corrected and the

alarm cleared itself.

9.5.2 Viewing alarm Status and Clearing Alarms – Click [Alarm] Page Button, the alarm status

page will show up (Figure 11.5). If not, Click [menu] Button, then select “Status” from the

popup menu. There are 4 buttons on the lower right side of the page.

► Clear: Select the alarm line you want to delete, and then click this button to clear the

alarm one at a time.

► Clear All: Click this button to clear all the alarms. However, problems that can not

cleared by the system will show up as a new alarm.

Note: Cleared alarms remain displayed, but appeared dimmed.

► Purge: Click this button to remove all the cleared alarm from screen.

► Enable/Disabled: Click this button to toggle between audible and silent alarm

modes.

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lam5 Chapter 7.5

10.0 Troubleshooting Guidelines

10.1 Wafer In The Entrance Cassette Not Picked Up By The Wafer Shuttle

10.1.1 Cause: The wafer cassette is not loaded properly.

Solution: Adjust the cassette slightly to correct the problem. Do not lift the cassette

because the wafer shuttle is in the cassette.

10.1.2 Cause: The wafer is not loaded properly, e.g. cross slots, in the wafer cassette.

Solution: Report the problem on WAND, or ask help from the equipment staff. Do not try

to remove wafer cassette or wafer from the cassette. Doing so may bend the wafer

shuttle stuck in the cassette.

10.2 Load Point Vacuum Alarm

10.2.1 Cause: Wafer back side too rough or contaminate with particles/film.

Solution: Ask equipment staff to remove the wafer for you.

10.2.2 Cause: Wafer Shuttle vacuum problem

Solution: Wait a few seconds, this problem usually clears itself. If not, Report on WAND.

10.3 Chamber/Electrode Temperature Out of Tolerance Alarm

10.3.1 Cause: Previous user may set a different temperature.

Solution: Wait for a few minutes for the temperature to stabilize. If not stabilizing, report

on WAND.

10.3.2 Cause: The chiller is not working. This is the case if the temperature is at or cooling

toward room temperature.

Solution: Report the problem on WAND. The equipment staff will check the chiller.

10.4 Helium Clamp Pressure Stabilization Problem

10.4.1 Cause: The backside of the wafer is too rough, patterned, or contaminated with

particles/film.

Solution: Abort the process run. Unload the wafer and check the backside. Try a clean

dummy wafer with the same recipe. If problem repeats, see the following section.

10.4.2 Cause: The lower electrode surface was contaminated with particles, wafer chips, and/or

films.

Solution: Report the problem on WAND.

10.5 Chamber Pressure Stabilization Problem

10.5.1 Cause: The total gas flow may exceeds the pump capacity (for customized recipe)

Solution: Reduce the gas flows or increase the process pressure settingin the customized

recipe.

10.5.2 Cause: The Helium clamp flow too high. The clamp flow can be checked on the lower

right side of Process Page.

Solution: same as the helium clamp pressure problem above.

10.6 RF Stabilization Problem

10.6.1 Cause: This is complex problem. It could be the process wafer, customized recipe, or

equipment problem.

Solution: Abort the process and unload the wafer. Run a clean dummy wafer with a

standard recipe. It problem repeats, report the problem on WAND.

- 9 -

lam5 Chapter 7.5

10.7

Wafer Lost In The Chamber

10.7.1 Cause: Photo-resist on top of the wafer not properly hard-baked. Soft photo-resist sticks

to the helium clamp after plasma heating. It may cause the whole wafer stick to the

helium clamp and can not be unloaded.

Solution: Do not etch anymore wafers. Report the problem on WAND. Equipment staff

will remove the wafer for you.

10.7.2 Cause: Wafer backside contaminated with photo-resist or sticky film. The wafer sticks to

the lower electrode after the plasma heating. The wafer will be broken or pushed out of

the position when unloading.

Solution: Do not etch anymore wafers. Report the problem on WAND. Equipment staff

will remove the wafer for you. The wafer probably broke into pieces.

10.8 No Signal Trace or Signal Trace Doesn’t Change (Horizontal Line) on Graph Page

10.8.1 Cause: Y axis Range not set properly.

Solution: Reset the Y axis Range.

10.8.2 Cause: Wrong signal channel selected.

Solution: Select the right channel.

10.8.3 Cause: Etch area on the wafer too small.

Solution: no solution to this problem.

10.8.4 Cause: Endpoint detector malfunction, or window dirty

Solution: Report the problem on WAND.

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lam5 Chapter 7.5

11.0 Figures & Schematics

Figure 11.1 - Envision Operate Page

Figure 11.2 - Envision Process Page (Main Chamber)

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lam5 Chapter 7.5

Figure 11.3 - Envision Recipe Page

Figure 11.4 - Envision Datalog Page (Endpoint Tracing)

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lam5 Chapter 7.5

Figure 11.5 - Envision Alarm Page

- 13 -

lam5 Chapter 7.5

12.0

Appendix

Standard Recipes

12.1 Recipe 5001_POLY_ME: Standard Poly-Silicon Main Etch

PRESSURE [mtorr]

TCP RF [watts]

Bias RF [watts]

GAP [cm]

Cl

2

[sccm]

HBr [sccm]

He Clamp [torr]

COMPL

TIME (Seconds)

Step #1

0

0

0

5.8

0

0

0

Stable

20

Step #2

12

0

0

5.8

50

150

4

Stable

20

Step #3

12

300

150

5.8

50

150

4

Time

30

Step #4

0

0

0

0

0

0

0

End

0

12.2 Recipe 5002_POLY_OE: Standard Poly-Silicon Over Etch

PRESSURE [mtorr]

TCP RF [watts]

Bias RF [watts]

GAP [cm]

Cl

2

[sccm]

HBr [sccm]

O

2

[sccm]

He [sccm]

He Clamp [torr]

COMPL

TIME (seconds)

Step #1

0

0

0

5.8

0

0

0

0

0

Stable

20

Step #2

80

0

0

5.8

0

100

1

100

4

Stable

20

Step #3

80

200

150

5.8

0

100

1

100

4

Time

30

Step #4

0

0

0

0

0

0

0

0

0

End

0

- 14 -

lam5 Chapter 7.5

12.3

Recipe 5003_POLY_OB_ME_OE: Standard Poly-Silicon Oxide Breakthru + Main Etch +

Over Etch

PRESSURE [mtorr]

TCP RF [watts]

Bias RF [watts]

GAP [cm]

Cl

2

[sccm]

HBr [sccm]

O

2

[sccm]

He [sccm]

CF

4

[sccm]

He Clamp [torr]

COMPL

TIME [seconds]

Channel

Delay [seconds]

Norm [seconds]

Norm Value

Trigger [%]

Step #1

0

0

0

5.8

0

0

0

0

0

0

Stable

20

Step #2

13

0

0

5.8

0

0

0

0

100

4

Stable

30

Step #3

13

200

40

5.8

0

0

0

0

100

4

Time

10

Step #4 Step #5

12

0

0

5.8

0

150

0

0

0

4

Stable

30

12

300

150

5.8

0

150

0

0

0

4

EndPt

45

A

15 s

10 s

5000

90

Step #6

80

0

0

5.8

0

100

1

100

0

4

Stable

30

Step #7

80

200

150

5.8

0

100

1

100

0

4

OvrEt

20

Step #8

0

0

0

0

0

0

0

0

0

0

End

12.4 Recipe 5004_POLY_OB_Cl: Standard Poly-Silicon Oxide Breakthru Cl

2

Chemistry

PRESSURE [mtorr]

TCP RF [watts]

Bias RF [watts]

GAP [cm]

Cl

2

[sccm]

HBr [sccm]

O

2

[sccm]

He [sccm]

He Clamp [torr]

COMPL

TIME (seconds)

Step #1

0

0

0

5.8

0

0

0

0

0

Stable

20

Step #2

10

0

0

5.8

60

0

0

0

4

Stable

30

Step #3

10

200

100

5.8

60

0

0

0

4

Time

30

Step #4

0

0

0

0

0

0

0

0

0

End

0

- 15 -

lam5 Chapter 7.5

12.5

Recipe 5005_POLY_OB: Standard Poly-Silicon Oxide Breakthru

PRESSURE [mtorr]

TCP RF [watts]

Bias RF [watts]

GAP [cm]

Cl

2

[sccm]

HBr [sccm]

CF

4

[sccm]

He [sccm]

He Clamp [torr]

COMPL

TIME (seconds)

Step #1

0

0

0

5.8

0

0

0

0

0

Stable

20

Step #2

13

0

0

5.8

0

0

100

0

4

Stable

30

Step #3

13

200

40

5.8

0

0

100

0

4

Time

10

Step #4

0

0

0

0

0

0

0

0

0

End

0

12.6 Recipe 5963_POLY_OB_ME_OE_Hi: Standard Poly-Silicon Oxide Breakthru + Main Etch

(manual EndPt) + Over Etch (Highly Selective recipe)

Step #1

0

0

0

5.8

0

0

0

0

0

0

Stable

20 s

Step #2

13

0

0

5.8

0

0

0

0

100

4

Stable

30 s

Step #3

13

200

40

5.8

0

0

0

0

100

4

Time

10 s

Step #4

12

0

0

5.8

50

150

0

0

0

4

Stable

30 s

Step #5

12

300

150

5.8

50

150

0

0

0

4

Time**

60 s

Step #6

15

0

0

5.8

0

200

5

0

0

4

Stable

30 s

Step #7

15

250

120

5.8

0

200

5

0

0

0

Time

60 s

PRESSURE [mtorr]

TCP RF [watts]

Bias RF [watts]

GAP [cm]

Cl

2

[sccm]

HBr [sccm]

O

2

[sccm]

He [sccm]

CF

4

[sccm]

He Clamp [torr]

COMPL

TIME [seconds]

** Manual EPD

- 16 -

lam5 Chapter 7.5

12.7 Recipe 6001-SiC-ME: Available SiC recipe consists of main etch only ( end point signal

same as Si etch - Channel A)

** Manual EPD

Step #1 Step #2 Step #3 Step #4

PRESSURE [mtorr]

0 12 12 0

TCP RF [watts]

0 0 300 0

Bias RF [watts]

0 0 150 0

GAP [cm]

5.8 5.8 5.8 0

Cl

2

[sccm]

0 125 125 0

HBr [sccm]

0 75 75 0

O

2

[sccm]

0 0 0 0

He [sccm]

0 0 0 0

CF

4

[sccm]

0 100 100 0

He Clamp [torr]

0 4 4 4

COMPL

Stable Stable Time End

TIME [seconds]

20 s 30 s 60 s 30 s

- 17 -