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RESEARCH HIGHLIGHTS
Journal of Semiconductors
(2021) 42, 060201
doi: 10.1088/1674-4926/42/6/060201
GIWAXS: A powerful tool for perovskite photovoltaics
Chenyue Wang
1
, Chuantian Zuo
2
, Qi Chen
1, †
, and Liming Ding
2, †
1
MIIT Key Laboratory for Low-dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials
Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
2
Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for
Nanoscience and Technology, Beijing 100190, China
Citation: C Y Wang, C T Zuo, Q Chen, and L M Ding, GIWAXS: A powerful tool for perovskite photovoltaics[J]. J. Semicond., 2021,
42(6), 060201. /10.1088/1674-4926/42/6/060201
The power conversion efficiency (PCE) for perovskite sol-
ar cells (PSCs) now reaches 25.2%
[1]
. However, the perovskite
materials have complex compositions and variable phases,
calling for suitable characterization techniques to investigate
the underlying operation and degradation mechanism. Graz-
ing-incidence wide-angle X-ray scattering (GIWAXS) plays an
important role in studying perovskite materials. GIWAXS data
are generally two-dimensional diffractograms containing dif-
fraction rings of different crystal planes. Grazing-incidence
small-angle X-ray scattering (GISAXS) is similar to GIWAXS,
while it has a longer detection distance than that of GIWAXS
(Fig. 1(a))
[2]
. GISAXS enlarges the observable spatial range up
to 10–100 nm and reduces the measurement sensitivity of crys-
tallization, and it is mainly used to determine the morpho-
logy of bulk-heterojunction films in nanoscale
[3, 4]
. Compared
to GISAXS, GIWAXS is more popular in perovskite study. This
technique has several advantages as follows: (1) high signal-
to-noise ratio (SNR) and sensitive structural resolution; (2) no-
contact and nondestructive probing; (3) abundant structural in-
formation; (4) depth resolution; (5)
in-situ
observation. Here,
we discuss two applications of GIWAXS, i.e., the crystallograph-
ic information at steady state, and the
in-situ
measurement
to probe the temporal information. As an important structur-
al parameter of perovskite films, crystallographic orientation
affects the optoelectronic properties and materials stability.
The 2D GIWAXS diffractogram presents the Debye-Scherrer
ring for certain crystallographic plane, enabling characteriza-
tion of structural orientation of perovskite films. The orienta-
tion degree for crystal planes can be obtained quantitatively
according to the diffraction rings along the azimuth by using
Herman’s orientation function.
Quasi-2D perovskites receive attention due to their vari-
able structures, tunable composition, and relatively high stabil-
ity. The insulating organic long-chain cations in quasi-2D per-
ovskites can block carrier transport. Suitable crystal orienta-
tion can enhance the carrier transport in 2D perovskites, thus
improving device performance. GIWAXS measurements give in-
formation about crystal orientation, it can also tell the stack-
ing manner of grains at different depths, which is essential
for understanding the crystallization mechanism. For ex-
ample, by using GIWAXS, Choi
et al.
found that the nucle-
ation and crystallization of BA
2
MA
3
Pb
4
I
13
perovskite occurs at
the gas-liquid interface during annealing, which results in the
Correspondence to: Q Chen, ***********.cn; L M Ding, ***************
Received 22 MARCH 2021.
©2021 Chinese Institute of Electronics
vertical alignment of 2D perovskite crystals (Fig. 1(b))
[5]
. They
further regulated the solvent and cation to prepare highly ver-
tically orientated 2D perovskite films
[6]
. Rafael
et al.
found
that the intermediate solvent complexes provide building
blocks in the formation of 2D perovskites according to GI-
WAXS measurements
[7]
.
High-quality 3D perovskites tend to make strong orienta-
tion at certain azimuth angle. GIWAXS results can be used to
evaluate the crystallization quality of 3D perovskite thin films.
The results can also be used to guide the process optimiza-
tion, as well as to clarify the relationship between crystallo-
graphic orientation and device performance. Zheng
et al.
regu-
lated the preferential orientation of perovskite crystals and im-
proved the interfacial carriers transport in the corresponding
devices by substituting A-site alkali metal cations
[8]
.
Recently, residual strain was observed in perovskite films
due to the mismatch of the expansion coefficients for the sub-
strate and perovskites, which influences the operational stabil-
ity and efficiency of perovskite solar cells. Microscopically, the
residual stress within the film results from a biaxial stretch-
ing of the perovskite lattice in in-plane direction. The shift of
corresponding diffraction peaks at different azimuthal angles
reveals the lattice tilting and stretching. By depth-resolved GI-
WAXS, Zhu
et al.
observed a gradient strain in FA-MA per-
ovskite films (Fig. 1(c)). The performance of PSCs was im-
proved by reducing lattice mismatch of the crystals
[9]
. Wang
et al.
replaced A-site cations on the perovskite surface by us-
ing OAI post-treatment, forming a “bone-joint” configuration,
reducing surface residual stresses and thus improving humid-
ity and thermal stability of PSCs
[10]
.
In-situ
measurement is attractive in perovskite research.
It provides a rapid approach to track microstructural changes
in perovskite materials, including the crystallization and
aging processes. It is the key to unravel the kinetics process
of perovskite materials. The formation process of perovskite
crystals is not fully understood yet. The film formation pro-
cess includes liquid-film gelation stage and crystallization
stage. Many studies have shown that the orientation and
phase structure of perovskite are already established during
gelation stage. The quality of the perovskite precursor film
(gel) significantly affects the final perovskite film.
In-situ
GI-
WAXS provides information for the composition evolution
during spin-coating process. It also provides guidelines for pre-
paration conditions, such as spin speed and time, dripping
time of anti-solvent, etc. Amassian
et al.
have conducted a
series of
in-situ
GIWAXS studies on perovskite. They ob-
served the transition of perovskite precursors from liquid
2
Journal of Semiconductors doi: 10.1088/1674-4926/42/6/060201
(a)
GIWAXS
z
y
k
i
x
k
f
α
i
α
f
ψ
q
xz
GISAXS
α
f
χ
ψ
q
z
k
f
(b)
Oriented perovskite grown
on mp-TiO
2
substrate
1.6
1.2
0.8
0.4
0
00.5
1.01.52.0
Q
xy
(Å
−1
)
Nucleating from air−liquid
interface—preferential orientation
m
.
1
m
0
−
5
.
0
0
.
≈
≈
2
q
xy
Q
z
(
Å
−
1
)
q
(c)
31.695
2
θ
(
°
)
31.680
31.665
31.650
0
(e)
Carrier
gas
Tensile-strain
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