admin 管理员组

文章数量: 1184232


2024年12月29日发(作者：易语言编写软件破解)

专利内容由知识产权出版社提供

专利名称：Method of fabricating laser diode

发明人：Yeon-hee Kim,Kwang-ki Choi,Youn-joon Sung

申请号：US11152255

申请日：20050615

公开号：US07344904B2

公开日：20080318

专利附图：

摘要：Provided is a method of fabricating a laser diode. Embodiments of the method

include sequentially forming at least a lower clad layer, a resonance layer, an upper clad

layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a

substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode

layer, the upper contact layer, and a predetermined depth of the upper clad layer;

exposing both top surfaces of the upper contact layer and both bottom surfaces of the

sacrificial layer corresponding thereto by etching portions of the upper electrode layer,

which are exposed on both sides of the ridge portion; forming a buried layer having an

opening that exposes at least a portion of the bottom surface of the sacrificial layer, the

buried layer formed on the surface of the ridge portion and the top surface of the upper

clad layer that extends from the ridge portion; and removing the sacrificial layer and a

portion of the buried layer disposed thereon by supplying an etchant through the

opening.

申请人：Yeon-hee Kim,Kwang-ki Choi,Youn-joon Sung

地址：Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-do KR

国籍：KR,KR,KR

代理机构：Buchanan Ingersoll & Rooney PC

更多信息请下载全文后查看


本文标签： 专利 知识产权 出版社 内容 软件

版权声明：本文标题：Method of fabricating laser diode 内容由网友自发贡献，该文观点仅代表作者本人， 转载请联系作者并注明出处：http://www.roclinux.cn/p/1735498902a1672771.html， 本站仅提供信息存储空间服务，不拥有所有权，不承担相关法律责任。如发现本站有涉嫌抄袭侵权/违法违规的内容，一经查实，本站将立刻删除。