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2024年12月29日发(作者：vivo下拉菜单设置快捷)

专利内容由知识产权出版社提供

专利名称：PHOTOVOLTAIC DEVICE

发明人：MURAMATSU SHINICHI,SAITO

TADASHI,SHIMADA JUICHI,MATSUBARA

SUNAO,NAKAMURA NOBUO,ITO HARUO

申请号：JP26000284

申请日：19841211

公开号：JPS61139072A

公开日：19860626

摘要：PURPOSE:To form a device, in which a photovoltaic element shaped by the same

semiconductor layer on the same substrate is isolated effectively through a simple

means, by making the conductivity of an interface adjacent section connected to an

electrode and a wiring lead out of the electrode higher than that of a section not coated

with the electrode. CONSTITUTION:A transparent electrode 2 is formed onto a substrate

1, an ITO is shaped in 2,000Angstrom through an electron beam evaporation method by

using a metallic mask, and an amorphous silicon layer 3 is formed onto the whole surface

of the substrate 1. A P-layer 4 in 100Angstrom , an I-layer 5 in 5,000Angstrom and lastly

an N-layer 6 in 400Angstrom are shaped. A mixed gas of SiH4, CH4, B2H6 and H2 is

employed in order to form the layer 4, and a-SiC:H, a band gap thereof is wider than

normal amorphous silicon (a-Si:H) and which contains carbon, is shaped. The conductivity

of the P-layer 4 extends over approximately 1X10<-6>OMEGA<-1>.cm<-1>. Only SiH4 is

used in order to form the I-layer 5, and the conductivity of the layer 5 extends over

approximately 1X10<-4>OMEGA<-1>.cm<-1> under the irradiation of artificial solar

rays. SiH4, PH3 and H2 are employed in order to shape the N-layer 6, and the

conductivity of the layer 6 is 1X10<-5>OMEGA<-1>.cm<-1>.

申请人：AGENCY OF IND SCIENCE & TECHNOL

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