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2024年12月29日发(作者：python正则表达式首尾相同)

专利内容由知识产权出版社提供

专利名称：SOI SUBSTRATE AND METHOD FOR

MANUFACTURING SOI SUBSTRATE

发明人：Masaharu NAGAI,Hideto OHNUMA,Kosei

NEI

申请号：US13372541

申请日：20120214

公开号：US2A1

公开日：20120823

专利附图：

摘要：The method for manufacturing an SOI substrate includes the following steps:

forming an insulating film on a semiconductor substrate; exposing the semiconductor

substrate to accelerated ions so that an embrittlement region is formed in the

semiconductor substrate; bonding the semiconductor substrate to a base substrate with

the insulating film interposed therebetween; separating the semiconductor substrate

along the embrittlement region so that a semiconductor film is provided over the base

substrate with the insulating film interposed therebetween; and forming a mask over the

semiconductor film to etch part of the semiconductor film and part of the insulating film

so that the periphery of the semiconductor film is on the inner side than the periphery of

the insulating film.

申请人：Masaharu NAGAI,Hideto OHNUMA,Kosei NEI

地址：Atsugi JP,Atsugi JP,Atsugi JP

国籍：JP,JP,JP

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