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2024年12月29日发(作者：iso模型)

JournaloftheEuropeanCeramicSociety27(2007)2941–2944

Multilayerthick-ﬁlmtechnologyasappliedto

designofmicrowavedevices

nova

a,∗

b,1

,nyak

burgElectrotechnicalUniversity,DepartmentofMicroelectronics&RadioEngineering,5,t.,197376,burg,Russia

InnovationCenterRFNXPSemiconductors,Gerstweg2,6534AENijmegen,TheNetherlands

Availableonline8January2007

Abstract

Possibilitiesofthesandwichmultaldesignsofvariouspassive

micmentalresultsconﬁrmedagoodpotentialofthesandwich

technologytodesignhigh-performancemultilayermicrowaveintegratedcircuits.

©htsreserved.

Keywords:Microwaveintegratedcircuits(MICs)

uction

Thelowtemperatureco-ﬁredceramics(LTCC)technology

isgenerallyusedtofabricatemultilayermicrowaveintegrated

circuits(MICs).

1–4

Allocationofpassivecomponentswithin

severallayersmakesitpossibletodesignhighlyintegratedMICs

-costLTCCtechnologyusingthescreen-

printingtechniquesuitswellforamassproductionofmicrowave

deviceswithimprovedprice/performance.

Thethick-ﬁlmsandwichtechnologywasshowntobeanalter-

nativetotheLTCConeregardingadesignofmicrowavedevices

asmultilayerMICs.

Microwavedevicesusingtransmissionlinesectionsareofa

largesizeatlowmicrowavefrequenciesandexhibitaspurious

ametime,thebothmultilayertechnologies

allowdesigningverycompactandfreeofspuriousresponse

microwavedevicesbasedonquasi-lumpedcomponents.

Thegoalofthispaperistodemonstrateagoodpoten-

tialofthesandwichtechnologyforthedesignofmultilayer

urequasi-lumped-elementbandpassﬁlter,3and

10-dBdirectionalcouplers,andabalunforwirelessapplications

weredesignedasmultilayersandwichstructures,fabricatedand

experimentallyinvestigated.

∗

dwichmultilayertechnology

Thoughthesandwichmultilayertechnologyisquitesim-

ilartotheLTCCone,therearesomeprincipaldifferences

Ctechnologyusesthescreen-printing

techniqueformetallizationpatterningoverthindielectricsheets

(∼100␮m).Patternedsheetsarestackedup,laminatedandﬁred

underthetemperatureofabout850

◦

saythatmet-

allizationpatterningintheLTCCtechnologyisfabricated“in

parallel”.Inturn,athickceramicsubstrateisusedasthecore

tive

anddielectricpastesare,respectively,appliedformetallization

patterningandfabricationofadditionalthindielectriclayerson

allayer

thicknessis15␮mfortheconductivelayersand60␮mforthe

ersaredeposited“inseries”mannerwith

aconsecutiveco-ﬁ-ﬁringtemperature

isapproximatelythesameasfortheLTCCstructures—upto

900

◦

Thesandwichmultilayertechnologyhavethefollowing

advantagesforMICsrealizationwithrespecttotheLTCC

process:(i)smallerthicknessofdielectriclayerswithrespect

toLTCCmaterialsallowsdecreasingtheareaoccupiedby

parallel-platecapacitors;(ii)parasiticgroundedcapacitances

aresufﬁcientlyeliminatedduetousingofthethicksub-

strate.

Thesandwichprocessiscompatiblewithplanarthin-ﬁlm

amicsubstrateemployedinthesandwich

.:+78123460867;fax:+78123460867.

E-mailaddresses:MWLab@(nova),

@().

Tel:+31243535303;fax:+31243536556.

0955-2219/$–seefrontmatter©htsreserved.

doi:10.1016/ramsoc.2006.11.019

novaetal./JournaloftheEuropeanCeramicSociety27(2007)2941–2944

lentcircuit(a),multilayerimplementation(b)andcharacteristics

(c)ofthethree-polebandpassﬁlter.

structurescouldplaytheroleofPCB,ontowhichafront-end

modulewouldassembled.

emicrowavedevicesrealizedassandwich

multilayerstructures

Thethree-poleChebyshevbandpassﬁlterforBluetoothand

WLANapplications(2400–2500MHz)wasdesignedasasand-

equivalentcircuitoftheﬁﬁlterstruc-

ture(Fig.1b)usestwo60-␮mthickdielectriclayerswiththe

dielectricconstantε

=10.2andthelosstangenttanδ=0.002,

whicharesituatedunderneaththe1-mmthickaluminasubstrate.

Groundedcapacitanceswererealizedasparallel-platecapaci-

couplingcapacitanceswereproducedbyoverlaying

ors

weredesignedastransmissionlinesectionsofcorresponding

rostripfeedlinesplacedonthetopsurfaceof

thesubstrateareconnectedtotheﬁ-

verpastewithR

=0.02

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