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2024年12月28日发(作者：formate函数啥意思)

专利内容由知识产权出版社提供

专利名称：SEMICONDUCTOR SUBSTRATE,

SEMICONDUCTOR ELEMENT AND METHOD

FOR PRODUCING SEMICONDUCTOR

SUBSTRATE

发明人：KURAMATA, Akito,WATANABE,

Shinya,SASAKI, Kohei,YAGI, Kuniaki,HATTA,

Naoki,HIGASHIWAKI, Masataka,KONISHI,

Keita

申请号：EP18831693.9

申请日：20180709

公开号：EP3653762A1

公开日：20200520

专利附图：

摘要：Provided is a semiconductor substrate 1 wherein: a single crystal GaO substrate

10 and a polycrystalline substrate 11 are bonded with each other; the thickness of the

single crystal GaO substrate 10 is thinner than the thickness of the polycrystalline

substrate 11; and the fracture toughness value of the polycrystalline substrate 11 is

higher than the fracture toughness value of the single crystal GaO substrate 10.

申请人：Tamura Corporation,Sicoxs Corporation,National Institute of Information and

Communication Technology

地址：1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 JP,5-11-3, Shimbashi,

Minato-ku Tokyo 1050004 JP,4-2-1 Nukui-Kitamachi Koganei-shi Tokyo 184-8795 JP

国籍：JP,JP,JP

代理机构：Betten & Resch

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