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2024年12月27日发(作者：墨茶是不是清羽)

专利内容由知识产权出版社提供

专利名称：SUBSTRATE PROCESSING METHOD,

SUBSTRATE PROCESSING SYSTEM, AND

COMPUTER-READABLE STORAGE MEDIUM

发明人：Kazuhiro Tomioka,Nobuyoshi

Kobayashi,Isamu Sakuragi,Kazuhiro Kubota

申请号：US11870641

申请日：20071011

公开号：US2A1

公开日：20090115

专利附图：

摘要：A substrate processing method includes preparing a substrate having a low-k

interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-

k interlayer insulating film, serving as an etching mask with a predetermined circuit

pattern; etching the low-k interlayer insulating film through the photoresist film to form

grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film

by using hydrogen radicals generated by bring a hydrogen-containing gas into contact

with a catalyst of a high temperature; and recovering damage to the low-k interlayer

insulating film due to the ashing by supplying a specific recovery gas. The method further

includes recovering damage to the low-k interlayer insulating film due to the etching by

supplying a specific recovery gas.

申请人：Kazuhiro Tomioka,Nobuyoshi Kobayashi,Isamu Sakuragi,Kazuhiro Kubota

地址：Tokyo JP,Tokyo JP,Nirasaki-shi JP,Nirasaki-shi JP

国籍：JP,JP,JP,JP

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