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2024年12月27日发(作者：先序线索二叉树链表存储结构怎么画)

专利内容由知识产权出版社提供

专利名称：Ceramic substrate for semiconductor

fabricating device

发明人：Yasuji Hiramatsu,Yasutaka Ito

申请号：US09926800

申请日：20020319

公开号：US06753601B2

公开日：20040622

专利附图：

摘要：A ceramic substrate in which even if rapid temperature rising or rapid

temperature falling is conducted, no problem of cracking or warp of the ceramic

substrate occurs. In a case that the ceramic substrate is a ceramic substrate constituting

an electrostatic chuck, local dispersion of chuck power is eliminated, in a case that the

ceramic substrate is a ceramic substrate constituting a hot plate, local dispersion of

temperature of a wafer treating face is eliminated, and in a case that the ceramic

substrate is a ceramic substrate constituting a wafer prober, dispersion of applied

voltage of a guard electrode or a ground electrode is eliminated and a stray capacitor or

noise can be eliminated. The ceramic substrate is provided with a conductor layer on the

surface of the ceramic substrate or inside the ceramic substrate. A ratio (t/t) of the

average thickness of the conductor layer (t) to the average thickness of the ceramic

substrate (t) is less than 0.1, and a dispersion of the thickness of the conductor layer to

the average thickness of the conductor layer is in a range of −70 to +150%.

申请人：IBIDEN CO., LTD.

代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P.C.

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