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2024年12月27日发(作者：idea安装教程免费)

专利内容由知识产权出版社提供

专利名称：Method for forming low dielectric constant

insulating layer with foamed structure

发明人：Tahorng Yang

申请号：US09895550

申请日：20010628

公开号：US06624092B2

公开日：20030923

专利附图：

摘要：A method is used to form an insulating layer with foamed structure. About the

method, a gel layer over a substrate, where the gel layer includes several types of

solution, an unextractable material, and a solvent. The substrate is then put in a closed

pressure chamber. The closed pressure chamber is heated to a subcritical temperature

with respect to the material which is included in the gel layer but to be extracted out. In

this situation, liquid and the material to be extracted all turn to a vapor phase due to the

pressure in the pressure chamber has reached the subcritical pressure, whereby

materials are extracted. Under this temperature, the vapor is flushed away, and a noble

gas is flushed into the pressure chamber for cleaning. The substrate with the gel layer is

cooled down to the environmental temperature. Then the substrate is taken out from

the pressure chamber.

申请人：MACRONIX INTERNATIONAL CO., LTD.

代理机构：J.C. Patents

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